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| 2SK3693-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Symbol Ratings Unit 450 VDS V VDSX *5 450 V Equivalent Continuous drain current ID 17 A Pulsed drain current ID(puls] 68 A Gate-source voltage VGS 30 V Repetitive or non-repetitive IAR *2 17 A Maximum Avalanche Energy EAS *1 221.9 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/s Peak Diode Recovery dV/dt dV/dt *3 5 kV/s Gate(G) Max. power dissipation PD Ta=25C 2.16 W Tc=25C 80 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage Viso *6 2000 V *1 L=1.41mH, Vcc=45V, Tch=25C See to Avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS< 450V *5 VGS=-30V *6 f=6-Hz, t=60sec. = = = = Item Drain-source voltage circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=450V VGS=0V Tch=25C Tch=125C VDS=360V VGS=0V VGS=30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8.5A VGS=10V RGS=10 VCC=225V ID=17A VGS=10V L=1.41mH Tch=25C IF=17A VGS=0V Tch=25C IF=17A VGS=0V -di/dt=100A/s Tch=25C Min. 450 3.0 Typ. Max. 5.0 25 250 100 0.38 Units V V A nA S pF 7 0.29 14 1275 1900 200 300 9.5 14 27 40 27 40 48 72 7 11 33 50 13.5 20.3 10.5 16 1.20 0.57 6.5 ns nC 17 1.80 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.563 58.0 Units C/W C/W 1 2SK3693-01MR Characteristics Allowable Power Dissipation PD=f(Tc) 30 80 25 FUJI POWER MOSFET 100 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 8V 60 PD [W] ID [A] 20 15 40 10 7.5V 7.0V 20 5 VGS=6.5V 0 0 25 50 75 100 125 150 0 0 4 8 12 16 20 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 VGS[V] ID [A] 0.9 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 1.0 0.9 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V 0.8 VGS=6.5V 7.0V 7.5V 0.8 0.7 0.7 RDS(on) [ ] RDS(on) [ ] 8V 0.6 0.6 0.5 0.4 typ. 0.3 0.2 max. 0.5 10V 20V 0.4 0.3 0.1 0.2 0 5 10 15 20 25 30 35 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3693-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25C 12 max. Vcc= 90V 225V 360V 5.0 10 VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 0 Ciss 10 C [nF] 10 -1 Coss IF [A] 1 3 10 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 600 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V IAS=7A tf 500 10 2 td(off) 400 IAS=11A EAS [mJ] 0 1 t [ns] 300 IAS=17A 200 td(on) 10 1 tr 100 10 0 0 10 -1 10 10 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3693-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=45V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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